Velocity saturation effect on short-channel MOS transistor capacitanceIWAI, H; PINTO, M. R; RAFFERTY, C. S et al.IEEE electron device letters. 1985, Vol 6, Num 3, pp 120-122, issn 0741-3106Article

Effects of switched gate bias on radiation-induced interface trap formationSAKS, N. S; BROWN, D. B; RENDELL, R. W et al.IEEE transactions on nuclear science. 1991, Vol 38, Num 6, pp 1130-1139, issn 0018-9499, 1Conference Paper

A better understanding of the channel mobility of Si MOSFET's based on the physics of quantized subbandsMOU-SHIUNG LIN.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2406-2411, issn 0018-9383Article

Accurate determination of doping profile from MOSFET d.c. measurementGUPTA, S.Microelectronics. 1988, Vol 19, Num 6, pp 4-7, issn 0026-2692Article

Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET'sYU-ZHANG CHEN; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2180-2188, issn 0018-9383Article

The influence of tilted source-drain implants on high-field effects in submicrometer MOSFET'sBAKER, F. K; PFIESTER, J. R.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2119-2124, issn 0018-9383Article

Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature techniqueHWU, J. B; LIN, C. M; WANG, W. S et al.Thin solid films. 1986, Vol 142, Num 2, pp 183-191, issn 0040-6090Article

Layout related deformations of meander-type MOS transistor I/V characteristicsMALY, W; SYRZYCKI, M.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 1, pp 13-16, issn 0143-7100Article

Modeling the turn-off characteristics of the bipolar-MOS transistorKUO, D.-S; CHOI, J.-Y; GIANDOMENICO, D et al.IEEE electron device letters. 1985, Vol 6, Num 5, pp 211-214, issn 0741-3106Article

Lateral nonuniformities and the MOSFET mobility step near thresholdWIKSTROM, J. A; VISWANATHAN, C. R.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2378-2383, issn 0018-9383Article

The photofield effect in a-Si: H thin film MOS transistors theory and measurementHARM, A. O; SCHROPP, R. E. I; VERWEY, J. F et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 52, Num 1, pp 59-70, issn 0141-8637Article

MECANISME CINETIQUE ET DE DIFFUSION DE L'ADHESION D'UN REVETEMENT POUDREUX AVEC LE SUPPORTBABUSHKIN GA; BULANOV V YA; SOLOV'EV LV et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 3; PP. 554-556; BIBL. 7 REF.Article

ZWEIDIMENSIONALE POTENTIALANALYSE IN MIS-STRUKTUREN = ANALYSE BIDIMENSIONNELLE DU POTENTIEL DANS DES STRUCTURES MOSSCHNEIDER J; NOTZOLD A.1983; NACHRICHTENTECHNIK. ELEKTRONIK; ISSN 0323-4657; DDR; DA. 1983; VOL. 33; NO 5; RUS/ENG; PP. 194-196; BIBL. 2 REF.Article

EFFECT OF THE ELECTRON TEMPERATURE ON THE GATE-INDUCED CHARGE IN SMALL SIZE MOS TRANSISTORSLEBURTON JP; DORDA G.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 611-615; BIBL. 12 REF.Article

MOSTSM: a physically based charge conservative MOSFET modelMASUDA, H; AOKI, Y; MANO, J et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1988, Vol 7, Num 12, pp 1129-1236, issn 0278-0070Article

The effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistorsKUEING-LONG CHEN.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2140-2150, issn 0018-9383Article

Measurement of the average doping concentration in the surface region of the MOS transistorINIEWSKI, K; JAKUBOWSKI, A; NOWAKOWSKI, Z et al.Physica status solidi. A. Applied research. 1987, Vol 100, Num 1, pp K103-K106, issn 0031-8965Article

Dependence of channel electric field on device scalingCHAN, T. Y; KO, P. K; HU, C et al.IEEE electron device letters. 1985, Vol 6, Num 10, pp 551-553, issn 0741-3106Article

The need for an explicit model describing MOS transistors in moderate inversionBAGHERI, M; TURCHETTI, C.Electronics Letters. 1985, Vol 21, Num 19, pp 873-874, issn 0013-5194Article

A simple method to determine channel widths for conventional and LDD MOSFET'sSHEU, B. J; KO, P. K.IEEE electron device letters. 1984, Vol 5, Num 11, pp 485-486, issn 0741-3106Article

Accuracy of an effective channel length/external resistance extraction algorithm for MOSFETsLAUX, S. E.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1245-1251, issn 0018-9383Article

Calculation of the threshold voltage of metal-oxide-semiconductor field-effect transistors with Pearson-IV channel doping profileKWONG, D. L; MEYERS, D. C.Journal of applied physics. 1984, Vol 56, Num 2, pp 424-428, issn 0021-8979Article

SIMPLIFIED LONG-CHANNEL MOSFET THEORYPIERRET RF; SHIELDS JA.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 143-147; BIBL. 6 REF.Article

MOS oscillators with multi-decade tuning range and Gigahertz maximum speedBANU, M.IEEE journal of solid-state circuits. 1988, Vol 23, Num 6, pp 1386-1393, issn 0018-9200Article

Analysis of the depletion-mode MOSFET including diffusion and drift currentsTURCHETTI, C; MASETTI, G.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 4, pp 773-782, issn 0018-9383Article